Modeling the effect of carbon on boron diffusion
- verfasst von
- H. Ruecker, B. Heinemann, W. Roepke, G. Fischer, G. Lippert, H. J. Osten, R. Kurps
- Abstract
Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).
- Externe Organisation(en)
-
Leibniz-Institut für innovative Mikroelektronik (IHP)
- Typ
- Paper
- Seiten
- 281-284
- Anzahl der Seiten
- 4
- Publikationsdatum
- 1997
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Allgemeiner Maschinenbau
