Thickness-dependent gap energies in thin layers of Hf Te5

verfasst von

C. Belke, S. Locmelis, L. Thole, H. Schmidt, P. Behrens, R. J. Haug

Abstract

Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.

Organisationseinheit(en)

Institut für Festkörperphysik
Institut für Anorganische Chemie
Laboratorium für Nano- und Quantenengineering
QuantumFrontiers

Typ

Artikel

Journal

2D Materials

Band

8

ISSN

2053-1583

Publikationsdatum

07.2021

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Chemie, Allgemeine Materialwissenschaften, Physik der kondensierten Materie, Werkstoffmechanik, Maschinenbau

Elektronische Version(en)

https://doi.org/10.1088/2053-1583/abf98b (Zugang: Offen)