Stability of crystalline Gd₂O₃ thin films on silicon during post-growth processing

verfasst von

D. Schwendt, D. Tetzlaff, E. Bugiel, H. J. Osten, H. D.B. Gottlob

Abstract

Experimental results for crystalline Gd₂O₃-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO₂ in future MOS devices. First electrical characteristics of n- and ptype SOI-MOSFETs with epitaxial Gd₂O₃ demonstrate the general feasibility of this novel gate insulator, but thermal stability during typical CMOS annealing processes has been identified as a key issue. Here, we investigate the effect of postgrowth annealing on layer properties. Standard forming gas anneal can eliminate flatband instabilities and hysteresis as well as reduce leakage currents by saturating dangling bond caused by the bonding mismatch. In addition, we investigated the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd₂O₃ layers grown on Si. Finally, we will show a new way to improve the thermal stability of those crystalline layers significantly.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik

Externe Organisation(en)

AMO GmbH

Typ

Aufsatz in Konferenzband

Publikationsdatum

2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Computernetzwerke und -kommunikation, Steuerungs- und Systemtechnik, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1109/ICSCS.2009.5414206 (Zugang: Geschlossen)