Characterization of very thin MBEgrown Ge epilayers on (001)Si

verfasst von: W. Kissinger, H. J. Osten, G. Lippert, B. Dietrich, E. Bugiel
Abstract: The preparation of atomically sharp Interfaces forthe SiGe system is of remarkableinterest forthepreparation of ultrathin layers and superlattices. We investigated the Influence of the molecular beamepitaxy (MBE)-growth conditions on the properties of five monolayers of germanium, embedded In a(001) silicon matrix for a conventional as well as an antimonymediated growth In the temperatureregion from 300°C to 450°C. The layers were analyzed by electroreflectance (ER), Ramanspectroscopy and transmission electron microscopy (rEM); they show corresponding results for allthree methods of investigation.For growth without antimony, a tendency towards segregationinduced alloying with Increasinggrowth temperatures was observed.Antimony-mediated growth experiments show that the surfactant is able to improve the bulkcharacter of the germannim layer at higher temperatures only While ft does not significantly infkjencethe layer growth at lower temperatures. Among all Investigated growth conditions we found the bestsharpness of the germanium layer Intedace for the antimonymediated growth at 450°C.A thermal treatment after growth at Increasing temperatures Increased the alloying by anInterdiffuslon of Si and Ge as IndiCated by Raman measurements. In ER we observed a vanishing ofthe GeIlke transitions after a treatment at temperatures between 600°C and 700°C for 15 rrinutes.
Externe Organisation(en): Leibniz-Institut für innovative Mikroelektronik (IHP)
Typ: Konferenzaufsatz in Fachzeitschrift
Journal: Proceedings of SPIE - The International Society for Optical Engineering
Band: 2141
Seiten: 135-145
Anzahl der Seiten: 11
ISSN: 0277-786X
Publikationsdatum: 26.05.1994
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Angewandte Informatik, Angewandte Mathematik, Elektrotechnik und Elektronik
Elektronische Version(en): https://doi.org/10.1117/12.176847 (Zugang: Geschlossen)

BibTeX

@article{10ecca817d3a4cceb666b23ef4a16709,
title = "Characterization of very thin MBEgrown Ge epilayers on (001)Si",
abstract = "The preparation of atomically sharp Interfaces forthe SiGe system is of remarkableinterest forthepreparation of ultrathin layers and superlattices. We investigated the Influence of the molecular beamepitaxy (MBE)-growth conditions on the properties of five monolayers of germanium, embedded In a(001) silicon matrix for a conventional as well as an antimonymediated growth In the temperatureregion from 300°C to 450°C. The layers were analyzed by electroreflectance (ER), Ramanspectroscopy and transmission electron microscopy (rEM); they show corresponding results for allthree methods of investigation.For growth without antimony, a tendency towards segregationinduced alloying with Increasinggrowth temperatures was observed.Antimony-mediated growth experiments show that the surfactant is able to improve the bulkcharacter of the germannim layer at higher temperatures only While ft does not significantly infkjencethe layer growth at lower temperatures. Among all Investigated growth conditions we found the bestsharpness of the germanium layer Intedace for the antimonymediated growth at 450°C.A thermal treatment after growth at Increasing temperatures Increased the alloying by anInterdiffuslon of Si and Ge as IndiCated by Raman measurements. In ER we observed a vanishing ofthe GeIlke transitions after a treatment at temperatures between 600°C and 700°C for 15 rrinutes.",
author = "W. Kissinger and Osten, {H. J.} and G. Lippert and B. Dietrich and E. Bugiel",
year = "1994",
month = may,
day = "26",
doi = "10.1117/12.176847",
language = "English",
volume = "2141",
pages = "135--145",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",
note = "Spectroscopic Characterization Techniques for Semiconductor Technology V 1994 ; Conference date: 23-01-1994 Through 29-01-1994",
}