Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

verfasst von

R. de Vasconcellos Lourenço, P. Horenburg, P. Henning, H. Bremers, U. Rossow, A. Hangleiter

Abstract

The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.

Externe Organisation(en)

Technische Universität Braunschweig

Typ

Artikel

Journal

AIP Advances

Band

14

ISSN

2158-3226

Publikationsdatum

04.2024

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)

Elektronische Version(en)

https://doi.org/10.1063/5.0187072 (Zugang: Offen)
https://pubs.aip.org/adv/article/14/4/045122/3282287/Strong-evidence-for-diffusion-of-point-defects-in (Zugang: Unbekannt)