Quantum Hall resistance standards based on epitaxial graphene with p-type conductivity

verfasst von: Yefei Yin, Mattias Kruskopf, Stephan Bauer, Teresa Tschirner, Klaus Pierz, Frank Hohls, Rolf J. Haug, Hans W. Schumacher
Abstract: In the last decade, quantum resistance metrology has benefited from the application of graphene as the base material for the fabrication of quantum Hall (QH) resistance standards since it allows for the realization of the resistance unit ohm in the revised International System of Units under relaxed experimental conditions. Here, we present a detailed magnetotransport investigation of p-type epitaxial graphene, which was doped by the molecular acceptor F4-TCNQ. High-accuracy measurements of the QH resistance show an excellent quantization and a reproduction of the nominal value, the half of the von Klitzing constant R_K/2, within 2 nΩ/Ω. It underlines the universality of the QH effect and shows that p-type epitaxial graphene can also serve as the basis for future resistance standards for operation at relaxed experimental conditions. For the p-type devices, the onset of the QH plateau is observed at about 1 T higher magnetic fields, which can be attributed to an additional disorder or a non-symmetric charge transfer mechanism in the QH regime.
Organisationseinheit(en): Fakultät für Mathematik und Physik
QuantumFrontiers
Externe Organisation(en): Physikalisch-Technische Bundesanstalt (PTB)
Typ: Artikel
Journal: Applied physics letters
Band: 125
ISSN: 0003-6951
Publikationsdatum: 05.08.2024
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik und Astronomie (sonstige)
Elektronische Version(en): https://doi.org/10.1063/5.0223723 (Zugang: Geschlossen)

BibTeX

@article{dc976d9d6b14488897880a5a339589e2,
title = "Quantum Hall resistance standards based on epitaxial graphene with p-type conductivity",
abstract = "In the last decade, quantum resistance metrology has benefited from the application of graphene as the base material for the fabrication of quantum Hall (QH) resistance standards since it allows for the realization of the resistance unit ohm in the revised International System of Units under relaxed experimental conditions. Here, we present a detailed magnetotransport investigation of p-type epitaxial graphene, which was doped by the molecular acceptor F4-TCNQ. High-accuracy measurements of the QH resistance show an excellent quantization and a reproduction of the nominal value, the half of the von Klitzing constant RK/2, within 2 nΩ/Ω. It underlines the universality of the QH effect and shows that p-type epitaxial graphene can also serve as the basis for future resistance standards for operation at relaxed experimental conditions. For the p-type devices, the onset of the QH plateau is observed at about 1 T higher magnetic fields, which can be attributed to an additional disorder or a non-symmetric charge transfer mechanism in the QH regime.",
author = "Yefei Yin and Mattias Kruskopf and Stephan Bauer and Teresa Tschirner and Klaus Pierz and Frank Hohls and Haug, {Rolf J.} and Schumacher, {Hans W.}",
note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",
year = "2024",
month = aug,
day = "5",
doi = "10.1063/5.0223723",
language = "English",
volume = "125",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "6",
}