Injection level dependence of the defect-related carrier lifetime in light-degraded boron-doped Czochralski silicon

verfasst von

Jan Schmidt, Christopher Berge, Armin G. Aberle

Abstract

The carrier recombination lifetime in light-degraded boron-doped 1 cm Czochralski-grown silicon wafers is measured as a function of the bulk excess carrier concentration Δn. The measurements are performed with the quasi-steady state photoconductance method and cover a large injection level range between 10¹³ and 1.5×10¹⁷cm^-3. We observe a very strong increase of the carrier lifetime in the Δn range between 10¹⁴ and 2×10¹⁶cm^-3, which is attributed to boron-oxygen (B_iO_i) defect pairs. The observed strong increase of the defect-related carrier lifetime allows us to determine the previously unknown hole capture cross section σ_p of the B_iO_i pair. Our analysis gives a σ_p value of (0.45-1.2)×10^-15cm², which is 2-3 orders of magnitude smaller than the corresponding electron capture cross section.

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Applied physics letters

Band

73

Seiten

2167-2169

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

1998

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.122411 (Zugang: Unbekannt)