Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films

verfasst von

Vladimir A. Volodin, Taisiya T. Korchagina, Gennadiy N. Kamaev, Aleksandr Kh Antonenko, Jurgen Koch, Boris N. Chichkov

Abstract

Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiN_x:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

Externe Organisation(en)

RAS - Institute of Semiconductor Physics, Siberian Branch
Novosibirsk State University
Laser Zentrum Hannover e.V. (LZH)

Typ

Aufsatz in Konferenzband

Publikationsdatum

26.02.2010

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Angewandte Informatik, Angewandte Mathematik, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1117/12.853385 (Zugang: Unbekannt)