Lifetime degradation in boron doped Czochralski silicon

verfasst von: V. V. Voronkov, R. Falster, J. Schmidt, K. Bothe, A. V. Batunina
Abstract: The electron lifetime in boron-doped and oxygen-containing silicon decreases in the presence of excess electrons, and tends to some low saturated value. At lower intensity, the time scale of this process is strongly increased. The observed degradation kinetics, in a wide range of intensity, from 1 sun to 0.001 sun, is reproduced quantitatively within a simple model based on the presence of latent boron-oxygen centre (LC). Under illumination, LC captures an electron and then reconstructs into a recombination-active configuration (SRC). The forward reaction LC → SRC as well as the backward one depend on the population of charge states of LC and SRC. To account for the saturated lifetime in dependence of the light intensity, three charge states of SRC should be invoked, implying that SRC has two energy levels: a donor and an acceptor. The latter level accounts for the recombination activity of SRC.
Externe Organisation(en): MEMC Electronic Materials
Institut für Solarenergieforschung GmbH (ISFH)
Institute of Rare Metals
Typ: Aufsatz in Konferenzband
Seiten: 103-112
Anzahl der Seiten: 10
Publikationsdatum: 2010
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Allgemeiner Maschinenbau
Elektronische Version(en): https://doi.org/10.1149/1.3485685 (Zugang: Unbekannt)

BibTeX

@inproceedings{ba3d646169a14f0992121eafb2e89d21,
title = "Lifetime degradation in boron doped Czochralski silicon",
abstract = "The electron lifetime in boron-doped and oxygen-containing silicon decreases in the presence of excess electrons, and tends to some low saturated value. At lower intensity, the time scale of this process is strongly increased. The observed degradation kinetics, in a wide range of intensity, from 1 sun to 0.001 sun, is reproduced quantitatively within a simple model based on the presence of latent boron-oxygen centre (LC). Under illumination, LC captures an electron and then reconstructs into a recombination-active configuration (SRC). The forward reaction LC → SRC as well as the backward one depend on the population of charge states of LC and SRC. To account for the saturated lifetime in dependence of the light intensity, three charge states of SRC should be invoked, implying that SRC has two energy levels: a donor and an acceptor. The latter level accounts for the recombination activity of SRC.",
author = "Voronkov, {V. V.} and R. Falster and J. Schmidt and K. Bothe and Batunina, {A. V.}",
year = "2010",
doi = "10.1149/1.3485685",
language = "English",
isbn = "9781607681809",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
number = "11",
pages = "103--112",
booktitle = "High Purity Silicon 11",
address = "United States",
edition = "11",
note = "High Purity Silicon 11 - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",
}