In situ cleaning of Si surfaces by UV/ozone

verfasst von

G. Lippert, H. J. Osten

Abstract

We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Journal of crystal growth

Band

127

Seiten

476-478

Anzahl der Seiten

3

ISSN

0022-0248

Publikationsdatum

02.02.1993

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1016/0022-0248(93)90664-I (Zugang: Geschlossen)