Imaging techniques for the analysis of silicon wafers and solar cells

verfasst von

K. Bothe, K. Ramspeck, D. Hinken, R. Brendel

Abstract

For large area devices a spatial analysis of local device and material parameters is essentially important. Imaging techniques allowing a fast and contactless analysis with a high spatial resolution have become a versatile characterization tool during the last decade. We present a comprehensive overview over the existing imaging techniques for the analysis of silicon wafers and solar cells utilizing different spectral ranges of photon emission. Additionally, we report on recent studies of local junction breakdown and the emission of light from solar cells under forward and reverse bias using luminescence imaging and dark lock-in thermography. Finally we present a calibration-free dynamic infrared carrier lifetime mapping (dynamic-ILM) technique, yielding images of the carrier lifetime of multi-crystalline silicon wafers within seconds.

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Aufsatz in Konferenzband

Seiten

63-78

Anzahl der Seiten

16

Publikationsdatum

2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeiner Maschinenbau

Elektronische Version(en)

https://doi.org/10.1149/1.2980293 (Zugang: Geschlossen)