Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries

verfasst von

T. Schmidt, R. Haug, K. Klitzing, A. Förster, H. Lüth

Abstract

We fabricated submicrometer-diameter double-barrier diodes from four wafers with different barrier-thickness asymmetry. All samples exhibit staircaselike features in the current-voltage characteristic at the current threshold due to single-electron tunneling. Our study focuses on the properties of the first current step which arises from tunneling through the energetically lowest discrete electron state within the double-barrier region. The analysis of the bias position of the step allows a spatial spectroscopy of the vertical position of the lowest discrete level in the double-barrier region. The magnitude of the step is in excellent agreement with theory for all barrier-thickness asymmetries whereas the broadening of the step edge exceeds the lifetime-related width of the discrete state by one order of magnitude.

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung
Forschungszentrum Jülich

Typ

Artikel

Journal

Physical Review B - Condensed Matter and Materials Physics

Band

55

Seiten

2230-2236

Anzahl der Seiten

7

ISSN

1098-0121

Publikationsdatum

01.01.1997

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie

Elektronische Version(en)

https://doi.org/10.1103/PhysRevB.55.2230 (Zugang: Unbekannt)