Temperature-dependent photo-elastic coefficient of silicon at 1550 nm

verfasst von: Johannes Dickmann, Jan Meyer, Mika Gaedtke, Stefanie Kroker
Abstract: This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 ^{- 11} 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.
Externe Organisation(en): Technische Universität Braunschweig
Laboratory for Emerging Nanometrology Braunschweig (LENA)
Physikalisch-Technische Bundesanstalt (PTB)
Typ: Artikel
Journal: Scientific reports
Band: 13
ISSN: 2045-2322
Publikationsdatum: 12.2023
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Allgemein
Elektronische Version(en): https://doi.org/10.1038/s41598-023-46819-0 (Zugang: Offen)

BibTeX

@article{46251ffb4f9a4baf9760c7c98c7d9fb1,
title = "Temperature-dependent photo-elastic coefficient of silicon at 1550 nm",
abstract = "This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient{\textquoteright}s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient{\textquoteright}s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.",
author = "Johannes Dickmann and Jan Meyer and Mika Gaedtke and Stefanie Kroker",
note = "Funding information: Funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy EXC-2123 QuantumFrontiers 390837967. J.D. and S.K. also acknowledge partial support by European Association of National Metrology Institutes. This project (20FUN08 NEXTLASERS) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union{\textquoteright}s Horizon 2020 research and innovation programme, 17FUN05 PhotOQuant. Funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy EXC-2123 QuantumFrontiers 390837967. J.D. and S.K. also acknowledge partial support by European Association of National Metrology Institutes. This project (20FUN08 NEXTLASERS) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union{\textquoteright}s Horizon 2020 research and innovation programme, 17FUN05 PhotOQuant. ",
year = "2023",
month = dec,
doi = "10.1038/s41598-023-46819-0",
language = "English",
volume = "13",
journal = "Scientific reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",
}