Electrochemical Etching of Nitrogen Ion-Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning

verfasst von: Matthias Hoormann, Frederik Lüßmann, Christoph Margenfeld, Carsten Ronning, Florian Meierhofer, Andreas Waag
Abstract: Dopant-selective electrochemical etching (ECE) of gallium nitride (GaN) results in well-defined porous layers with tunable refractive index, which is extremely interesting for integrating photonic components into nitride technology. Herein, the impact of nitrogen implantation with and without subsequent rapid thermal annealing (RTA) on the porosification process of highly n-doped GaN ([Si] 3 × 10¹⁹ cm⁻³) is investigated. Implantation is expected to compensate the donors of the n-GaN layer to spatially suppress porosification during ECE. Optical transmission, electrochemical capacitance–voltage, and X-Ray diffractometry of as-grown and as-implanted GaN suggest successful compensation of n-dopants. Cross-sectional scanning electron microscopy reveals the presence of mesopores (diameter 2–50 nm) after ECE of the as-grown n-GaN. In the case of implanted n-GaN, it is found that ECE results in macropores (diameter > 50 nm), which can be suppressed by an intermediate RTA step. The implanted and annealed n-GaN layers solely exhibit mesopores at the top and bottom, while the intermediate region remains unimpaired. Chronoamperometry and gravimetry provide additional insight and confirm the presence of macro- and mesopores in samples without and with RTA, respectively. The results demonstrate a successful implementation of etch-resisting subsurface layers, which are required for 3D refractive index engineering in porous GaN.
Externe Organisation(en): Technische Universität Braunschweig
Friedrich-Schiller-Universität Jena
Typ: Artikel
Journal: Physica Status Solidi (B) Basic Research
Band: 261
ISSN: 0370-1972
Publikationsdatum: 11.2024
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie
Elektronische Version(en): https://doi.org/10.1002/pssb.202400067 (Zugang: Offen)

BibTeX

@article{37f43bdbcfa84eec9ba6d40ea2d6c6fe,
title = "Electrochemical Etching of Nitrogen Ion-Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning",
abstract = "Dopant-selective electrochemical etching (ECE) of gallium nitride (GaN) results in well-defined porous layers with tunable refractive index, which is extremely interesting for integrating photonic components into nitride technology. Herein, the impact of nitrogen implantation with and without subsequent rapid thermal annealing (RTA) on the porosification process of highly n-doped GaN ([Si] 3 × 1019 cm−3) is investigated. Implantation is expected to compensate the donors of the n-GaN layer to spatially suppress porosification during ECE. Optical transmission, electrochemical capacitance–voltage, and X-Ray diffractometry of as-grown and as-implanted GaN suggest successful compensation of n-dopants. Cross-sectional scanning electron microscopy reveals the presence of mesopores (diameter 2–50 nm) after ECE of the as-grown n-GaN. In the case of implanted n-GaN, it is found that ECE results in macropores (diameter > 50 nm), which can be suppressed by an intermediate RTA step. The implanted and annealed n-GaN layers solely exhibit mesopores at the top and bottom, while the intermediate region remains unimpaired. Chronoamperometry and gravimetry provide additional insight and confirm the presence of macro- and mesopores in samples without and with RTA, respectively. The results demonstrate a successful implementation of etch-resisting subsurface layers, which are required for 3D refractive index engineering in porous GaN.",
keywords = "electrochemical capacitance–voltage depth profiling, electrochemical etching, ion implantation, porous gallium nitride, rapid thermal annealing",
author = "Matthias Hoormann and Frederik L{\"u}{\ss}mann and Christoph Margenfeld and Carsten Ronning and Florian Meierhofer and Andreas Waag",
note = "Publisher Copyright: {\textcopyright} 2024 The Authors. physica status solidi (b) basic solid state physics published by Wiley-VCH GmbH.",
year = "2024",
month = nov,
doi = "10.1002/pssb.202400067",
language = "English",
volume = "261",
journal = "Physica Status Solidi (B) Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "11",
}