(n, γ)-Induced point defects in InP and InSb studied by β-radiation detected nuclear magnetic resonance

verfasst von

H. Grupp, K. Dörr, H. J. Stöckmann, H. Ackermann, B. Bader, W. Buttler, P. Heitjans, G. Kiese

Abstract

Polarized¹¹⁶In (I=1, T_1/2=14.1 s) nuclei were produced by capture of polarized thermal neutrons in undoped InP and InSb and in InSb:Te single crystals. As a consequence of the nuclear reaction charged and paramagnetic point defects were produced with a rate of about 0.8 per absorbed neutron. Spin-lattice relaxation rates of the¹¹⁶In probe nuclei were measured at temperatures between 1.3 K and 90 K, as well as NMR line profiles and magnetic field dependences of the nuclear polarization up to 0.63 T. Electric field gradients, produced by the defects, could be determined, and defect induced additional relaxation processes were observed. Further, characteristic phonon frequencies and spin-phonon coupling constants for the undisturbed crystal lattices could be derived.

Externe Organisation(en)

Ruprecht-Karls-Universität Heidelberg
Philipps-Universität Marburg
Institut Laue-Langevin

Typ

Artikel

Journal

Zeitschrift für Physik B Condensed Matter

Band

47

Seiten

1-12

Anzahl der Seiten

12

ISSN

0722-3277

Publikationsdatum

03.1982

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik der kondensierten Materie

Elektronische Version(en)

https://doi.org/10.1007/BF01686176 (Zugang: Unbekannt)